氮化镓场效应晶体管(GaN FET)
选型器
共计 6 / 6个产品
共计 6 / 6个产品
Part Number
Images
Configuration
VDS (V)
VGS (±V)
RDS(ON) Typ @5V (mΩ)
ID TA @25℃ (A)
ID TC @25℃ (A)
VGS(TH) Max (V)
QG Typ (nC)
QGS Typ (nC)
QGD Typ (nC)
CISS (pF)
COSS (pF)
CRSS (pF)
Package
Features
Status
SGMGB04340
NEW
Bidirectional
40
6
4
-
20
2.4
15.9
1.9/8.6
8.6/1.9
892
384
226
WLCSP-2.1×2.1-22B
40V, WLCSP Package, GaN E-Mode Power Transistor
量产
SGMGB09340
NEW
Bidirectional
40
6
9
-
10
2.4
7.3
0.9/3.9
3.9/0.9
410
177
104
WLCSP-1.2×1.7-12B
40V, WLCSP Package, GaN E-Mode Power Transistor
量产
SGMGQ03340
NEW
Single
40
-4 ~ 6
3
-
24
2.4
6.3
1.4
0.8
810
431
13
TQFN-4×3-25L
40V, TQFN Package, GaN E-Mode Power Transistor
量产
SGMGQ11410
NEW
Single
100
-4 ~ 6
1.1
34
477
2.1
25.1
7.5
3
3705
1083
16
TLGA-5×6-8L
100V, TLGA Package, GaN E-Mode Power Transistor
量产
SGMGQ27410
NEW
Single
100
-4 ~ 6
2.7
20
195
2.1
10.2
2.8
1.3
1455
443
8.1
TLGA-3.3×3.3-9L
100V, TLGA Package, GaN E-Mode Power Transistor
量产
SGMGQ58410
NEW
Single
100
-4 ~ 6
5.8
13
93
2.1
3.4
0.8
0.5
407
175
2.6
TLGA-3.3×3.3-9AL
100V, TLGA Package, GaN E-Mode Power Transistor
量产
1 到 6 共 6
第1页，共1页
