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SGM13005H2
Low Noise Amplifier with Bypass Switch for LTE High Band
Low Noise Amplifier with Bypass Switch for LTE High Band
GENERAL DESCRIPTION

The SGM13005H2 is a low noise amplifier (LNA) with bypass for LTE high band receiving application. The device features low noise figure and high linearity over a supply voltage range from 1.5V to 3.6V. Low noise figure improves the sensitivity of the SGM13005H2, and high linearity enables the device to provide better immunity to interference signals.

No external DC blocking capacitors are required on the RF paths as long as no external DC voltage is applied, which can save PCB area and cost.

The SGM13005H2 is available in a Green UTDFN-1.1×0.7-6L package.

PIN CONFIGURATIONS

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FEATURES
  • Operating Frequency Range: 2300MHz to 2700MHz

  • Low Noise Figure: 1.1dB at 2500MHz

  • Low Operation Current: 6.0mA

  • Bypass Mode Current: 1μA(MAX)

  • Single Supply Voltage Range: 1.5V to 3.6V

  • Input and Output DC Decoupled

  • Integrated Matching for the Output

  • Available in a Green UTDFN-1.1×0.7-6L Package

APPLICATIONS

Cell Phones

Tablets

Other RF Front-End Modules

ORDERING INFORMATION
Part Number Status Package Pins Pb-Free Temp Range
SGM13005H2YUEC6G/TR Production UTDFN-1.1×0.7-6L 6 Y -40℃ to +85℃ Samples