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SGM48520
5V, 6A/4A, Low-Side GaN and MOSFET Driver with 1ns Pulse Width
5V, 6A/4A, Low-Side GaN and MOSFET Driver with 1ns Pulse Width
GENERAL DESCRIPTION

The high-speed, single-channel low-side driver SGM48520 is designed to drive GaN FETs and logic level MOSFETs. Application areas include LiDAR, time of flight, facial recognition, and power converters using low-side drivers. The SGM48520 provides 6A source and 4A sink output current capability. Split output configuration allows individual turn-on and turn-off time optimization depending on FET. Package and pinout with minimum parasitic inductances reduce the rise and fall time and limit the ringing. Additionally, the 2.3ns propagation delay with minimized tolerances and variations allows efficient operation at high frequencies.

The driver has internal under-voltage lockout and over-temperature protection against overload and fault events.

The SGM48520 is available in Green WLCSP-0.88×1.28-6B and TDFN-2×2-6AL packages.

PIN CONFIGURATIONS

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FEATURES
  • 5V Supply Voltage

  • 6A Peak Source and 4A Peak Sink Currents

  • Ultra-Fast, Low-side Gate Driver for GaN and Si FETs

  • Minimum Input Pulse Width: 1ns

  • Up to 60MHz Operation

  • Propagation Delay: 2.3ns (TYP)

  • Rise Time: 550ps (TYP)

  • Fall Time: 480ps (TYP)

  • Protection Features:

    Under-Voltage Lockout (UVLO)

    Over-Temperature Protection (OTP)

  • Available in Green WLCSP-0.88×1.28-6B and TDFN-2×2-6AL Packages

APPLICATIONS

Laser Distance Measuring System

5G RF Communication System

Wireless Charging System

GaN DC/DC Conversion System

ORDERING INFORMATION
Part Number Status Package Pins Pb-Free Temp Range
SGM48520XG/TR Production WLCSP-0.88×1.28-6B 6 Y -40℃ to +125℃ Samples
SGM48520XTDI6G/TR Production TDFN-2×2-6AL 6 Y -40℃ to +125℃ Samples